参数项参数值
参数项参数值
Forward Transconductance - Min2.4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.6 V
TechnologySiC
Id - Continuous Drain Current22 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 6 V, + 22 V
PackagingTube
KRHTS8541299000
Typical Turn-On Delay Time23 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
ManufacturerROHM Semiconductor
Factory Pack Quantity360
CAHTS8541290000
Rds On - Drain-Source Resistance160 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time67 ns
Package / CaseTO-247-3
BrandROHM Semiconductor
TARIC8541290000
Maximum Operating Temperature+ 175 C
Mounting StyleThrough Hole
RoHS Details
ImageROHM Semiconductor SCT2160KEC
Qg - Gate Charge62 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 1200V20A160mOhm Silicon Carbide SiC
MXHTS85412999
Product TypeMOSFET
SeriesSCT2x
USHTS8541290095
Channel ModeEnhancement
Unit Weight1.340411 oz
Fall Time27 ns
CNHTS8541290000
Part # AliasesSCT2160KE
Pd - Power Dissipation165 W
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time25 ns