参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current38.8 A
Transistor PolarityN-Channel
Length15.94 mm
RoHS Details
Height20.95 mm
Vgs - Gate-Source Voltage- 30 V, + 30 V
Factory Pack Quantity30
BrandToshiba
Typical Turn-On Delay Time180 ns
KRHTS8541299000
PackagingTube
Maximum Operating Temperature+ 150 C
Rds On - Drain-Source Resistance62 mOhms
Typical Turn-Off Delay Time200 ns
TARIC8541290000
Package / CaseTO-247-3
JPHTS8541290100
Minimum Operating Temperature- 55 C
ManufacturerToshiba
CAHTS8541290000
SubcategoryMOSFETs
Width5.02 mm
Mounting StyleThrough Hole
Product TypeMOSFET
Qg - Gate Charge135 nC
ImageToshiba TK39N60W5,S1VF
Product CategoryMOSFET
MXHTS85412999
DescriptionMOSFET Power MOSFET N-Channel
SeriesTK39N60W5
USHTS8541290095
Channel ModeEnhancement
Unit Weight1.340411 oz
Fall Time9 ns
CNHTS8541290000
Pd - Power Dissipation270 W
TradenameDTMOSIV
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time120 ns