参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length10.63 mm
Height9.24 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min25
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseTO-220FP-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity50
PackagingTube
ImageON Semiconductor MJF31CG
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541290000
RoHS Details
DescriptionBipolar Transistors - BJT 3A 100V 30W NPN
SeriesMJF31C
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.081130 oz
USHTS8541290095
Pd - Power Dissipation28 W