参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Length10.28 mm
Height9.28 mm
ManufacturerON Semiconductor
KRHTS8541299000
PackagingTube
Factory Pack Quantity50
Minimum Operating Temperature- 65 C
JPHTS8541290100
Collector-Emitter Saturation Voltage1.2 V
BrandON Semiconductor
CAHTS8541290000
Package / CaseTO-220-3
DC Collector/Base Gain hfe Min25
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width4.82 mm
Mounting StyleThrough Hole
RoHS Details
ImageON Semiconductor TIP31AG
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 3A 60V 40W NPN
Product TypeBJTs - Bipolar Transistors
MXHTS85412999
SeriesTIP31A
USHTS8541290095
Unit Weight0.211644 oz
CNHTS8541210000
Pd - Power Dissipation40 W