参数项参数值
参数项参数值
Forward Transconductance - Min223 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Id - Continuous Drain Current240 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance2 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time182 ns
Width9.25 mm
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTO-263-7
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time91 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon / IR IRFS7730TRL7PP
RoHS Details
Unit Weight0.056438 oz
Factory Pack Quantity800
Product TypeMOSFET
Pd - Power Dissipation375 W
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 75V Single N-Channel HEXFET
Vds - Drain-Source Breakdown Voltage75 V
TradenameStrongIRFET
USHTS8541290095
Number of Channels1 Channel
Rise Time90 ns