参数项参数值
参数项参数值
Forward Transconductance - Min79 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current72 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time56 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge100 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time22 ns
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
ImageInfineon Technologies IRFS4127TRLPBF
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity800
Product TypeMOSFET
Pd - Power Dissipation375 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time18 ns