SQM100P10-19L_GE3

SQM100P10-19L_GE3

厂牌：威世(VISHAY)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047766199

描述：MOSFET P-CH 100V 93A 175DEG C 375W

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min50 S

TechnologySi

Vgs th - Gate-Source Threshold Voltage2.5 V

Transistor PolarityP-Channel

Id - Continuous Drain Current93 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

QualificationAEC-Q101

Minimum Operating Temperature- 55 C

JPHTS8541290100

Typical Turn-On Delay Time20 ns

CAHTS8541290000

Rds On - Drain-Source Resistance15.5 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time110 ns

Package / CaseTO-263-3

ImageVishay / Siliconix SQM100P10-19L_GE3

RoHS Details

PackagingTube

Maximum Operating Temperature+ 175 C

TARIC8541210000

BrandVishay / Siliconix

Mounting StyleSMD/SMT

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET P Ch -100Vds 20Vgs AEC-Q101 Qualified

ManufacturerVishay

Factory Pack Quantity800

Qg - Gate Charge350 nC

MXHTS85412999

SeriesSQ

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.077603 oz

Fall Time30 ns

CNHTS8541290000

Pd - Power Dissipation375 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time21 ns