参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage1.2 V
MXHTS85412999
KRHTS8541299000
Package / CaseDPAK-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandON Semiconductor
CNHTS8541290000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
SeriesMJD31
TARIC8541290000
Product TypeBJTs - Bipolar Transistors
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor NJVMJD31T4G
SubcategoryTransistors
Unit Weight0.009185 oz
USHTS8541290095
Pd - Power Dissipation15 W