参数项参数值
参数项参数值
Forward Transconductance - Min249 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Id - Continuous Drain Current240 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time24 ns
Width9.25 mm
Rds On - Drain-Source Resistance1.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time168 ns
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge236 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-7
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
CNHTS8541290000
BrandInfineon Technologies
Factory Pack Quantity800
ManufacturerInfineon
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFET N CH 60V 240A D2PAK
Fall Time79 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.056438 oz
USHTS8541290095
Pd - Power Dissipation375 W
TradenameStrongIRFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time102 ns