参数项参数值
参数项参数值
tariffCode85412900
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleDirectFET L8
Gate Source Threshold Voltage Max3V
No. of Pins15Pins
usEccnEAR99
Drain Source Voltage Vds75V
MSLMSL 1 - Unlimited
Product RangeHEXFET
euEccnNLR
Channel TypeN Channel
Power Dissipation125W
Qualification-
productTraceabilityNo
Continuous Drain Current Id160A
Operating Temperature Max175°C
Transistor MountingSurface Mount
Drain Source On State Resistance0.0018ohm
SVHCNo SVHC (08-Jul-2021)