参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Id - Continuous Drain Current195 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time52 ns
Rds On - Drain-Source Resistance1.65 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time172 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge274 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time104 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon / IR IRFS7530TRLPBF
Unit Weight0.139332 oz
Factory Pack Quantity800
Pd - Power Dissipation375 W
Product TypeMOSFET
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET MOSFET N CH 60V 195A D2PAK
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541290095
TradenameStrongIRFET
Number of Channels1 Channel
Rise Time141 ns