参数项参数值
参数项参数值
Forward Transconductance - Min160 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current300 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time38 ns
Rds On - Drain-Source Resistance750 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time76 ns
Width10.1 mm
Height2.4 mm
Length10.58 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge216 nC
Package / CaseHSOF-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time22 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon Technologies IPT007N06N
RoHS Details
Unit Weight0.038801 oz
SeriesOptiMOS 5
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation375 W
BrandInfineon Technologies
Part # AliasesSP001100158 IPT007N06NATMA1
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET TRENCH 40<-<100V
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time18 ns