IKW30N60TFKSA1

厂牌:英飞凌(INFINEON)
包装:TUBE 1
类目:元器件 > 分立器件 > IGBT晶体管
编号:B000047771455
描述:IKW30N60 - DISCRETE IGBT WITH ANTI-PARALLEL DIODE
最新价格近期成交39单+
数量价格(含税)
10¥32.8752
库存:0交期:7起订:10增量:10
数量:
X
32.8752(单价)
合计:
¥328.75
商品满500包邮
商品参数
参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.9 V
MXHTS85412999
KRHTS8541299000
Package / CaseTO-247-3
JPHTS8541290100
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 40 C
PackagingTube
Maximum Operating Temperature+ 175 C
Factory Pack Quantity240
CNHTS8541290000
DescriptionIGBT Transistors LOW LOSS DuoPack 600V 30A
BrandInfineon Technologies
ImageInfineon Technologies IKW30N60TFKSA1
SeriesTRENCHSTOP IGBT
Product TypeIGBT Transistors
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHS Details
Unit Weight0.172842 oz
SubcategoryIGBTs
Continuous Collector Current at 25 C45 A
Part # AliasesIKW30N60T SP000054887
Pd - Power Dissipation187 W
Continuous Collector Current Ic Max39 A
USHTS8541290095
TradenameTRENCHSTOP
Moisture Sensitivity Level1 (Unlimited)