SI2333DS-T1-E3

SI2333DS-T1-E3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047773729

描述：MOSFET P-CH 12V 4.1A SOT23-3MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V

下载数据手册

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min17 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage400 mV

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current5.3 A

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Height1.45 mm

Length2.9 mm

JPHTS8541290100

Typical Turn-On Delay Time25 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

Rds On - Drain-Source Resistance32 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time72 ns

Package / CaseSOT-23-3

RoHS Details

Factory Pack Quantity3000

ImageVishay Semiconductors SI2333DS-T1-E3

PackagingCut Tape

PackagingMouseReel

PackagingReel

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

Width1.6 mm

TARIC8541290000

ManufacturerVishay

BrandVishay Semiconductors

DescriptionMOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V

SubcategoryMOSFETs

Product CategoryMOSFET

Qg - Gate Charge18 nC

MXHTS85412999

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

CNHTS8541210000

Part # AliasesSI2333DS-T1

Pd - Power Dissipation1.25 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time45 ns