参数项参数值
参数项参数值
Forward Transconductance - Min2.5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1.5 V
TechnologySi
Id - Continuous Drain Current1.27 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 15 V, + 2 V
Typical Turn-On Delay Time4.5 ns
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time13 ns
Width3 mm
Height1.2 mm
Length4.4 mm
Qg - Gate Charge5.45 nC
Package / CaseTSSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
Minimum Operating Temperature- 40 C
Channel ModeEnhancement
Fall Time10 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
SeriesTPS1100
BrandTexas Instruments
Unit Weight0.001376 oz
RoHS Details
Factory Pack Quantity2000
ImageTexas Instruments TPS1100PWR
Pd - Power Dissipation504 mW
Product CategoryMOSFET
ManufacturerTexas Instruments
SubcategoryMOSFETs
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage15 V
Number of Channels1 Channel
Rise Time10 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)