参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current263 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance1.9 mOhms
Transistor Type1 N-Channel
Length10.16 mm
Height15.1 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge140 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingTube
BrandToshiba
CNHTS8541290000
ManufacturerToshiba
Factory Pack Quantity50
Product TypeMOSFET
Product CategoryMOSFET
SeriesTK100E06N1
TARIC8541290000
Channel ModeEnhancement
RoHS Details
ImageToshiba TK100E06N1,S1X
DescriptionMOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation255 W
TradenameU-MOSVIII-H
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel