参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time230 ns
Length20 mm
Width5 mm
Height26 mm
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time690 ns
Minimum Operating Temperature- 55 C
Package / CaseTO-3PL-3
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
Qg - Gate Charge360 nC
ImageToshiba TK100L60W,VQ
Factory Pack Quantity100
PackagingTube
DescriptionMOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
Product TypeMOSFET
BrandToshiba
Product CategoryMOSFET
RoHS Details
SeriesTK100L60
SubcategoryMOSFETs
ManufacturerToshiba
Channel ModeEnhancement
Fall Time125 ns
Unit Weight0.245577 oz
Pd - Power Dissipation797 W
TradenameDTMOSIV
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time130 ns