参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current800 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
Width1.3 mm
Height0.94 mm
Length2.9 mm
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor BCW66GLT1G
RoHS Details
Factory Pack Quantity3000
SeriesBCW66
ManufacturerON Semiconductor
Unit Weight0.001376 oz
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 45V
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation225 mW
SubcategoryTransistors