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SI4948BEY-T1-GE3

SI4948BEY-T1-GE3

厂牌：VISHAY(威世)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000047788095
描述：MOSFET P-CH D-S 60V 8-SOICMOSFET -60V Vds 20V Vgs SO-8MOSFET -60V Vds 20V Vgs SO-8
最新价格近期成交37单+
数量价格（含税）
1¥3.2890
100¥2.7334
1250¥2.5000
2500¥2.3889
库存：16,421交期：3-5Days起订：1增量：1
数量：
X
3.2890（单价）
合计：
￥3.29
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3.1 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance120 mOhms
RoHS Details
Package / CaseSO-8
Factory Pack Quantity2500
ImageVishay Semiconductors SI4948BEY-T1-GE3
PackagingMouseReel
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 175 C
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
SubcategoryMOSFETs
DescriptionMOSFET -60V Vds 20V Vgs SO-8
Product CategoryMOSFET
Qg - Gate Charge22 nC
MXHTS85412999
SeriesSI4
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541290000
Part # AliasesSI4948BEY-GE3
Pd - Power Dissipation2.4 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel