参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 10 mA, 5 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO180 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max160 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min80 at 10 mA, 5 V
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000296 oz
TARIC8541210000
ImagePanjit MMBT5551_R1_00001
Pd - Power Dissipation250 mW
RoHS Details
SeriesHVT-03TN
Factory Pack Quantity3000
BrandPanjit
ManufacturerPanjit
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT /M51/TR/7"/HF/3K/SOT-23/TRA/SOT/HVT-03TN/HVT03-QI13/PJ///
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)