PMDT290UCE,115

厂牌：安世(Nexperia)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047957885

描述：MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET

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商品参数

参数项参数值

Forward Transconductance - Min1.6 S

ConfigurationDual

TechnologySi

Id - Continuous Drain Current800 mA

Transistor PolarityN-Channel, P-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

QualificationAEC-Q101

Rds On - Drain-Source Resistance290 mOhms, 670 mOhms

Transistor Type1 N-Channel, 1 P-Channel

MXHTS85412101

KRHTS8541219000

Qg - Gate Charge0.68 nC, 1.14 nC

Package / CaseSOT-666-6

Mounting StyleSMD/SMT

JPHTS8541210101

CAHTS8541210000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

PackagingCut Tape

PackagingReel

PackagingMouseReel

BrandNexperia

CNHTS8541210000

ManufacturerNexperia

Product CategoryMOSFET

TARIC8541210000

Product TypeMOSFET

RoHS Details

Channel ModeEnhancement

Factory Pack Quantity4000

Fall Time31 ns, 72 ns

ImageNexperia PMDT290UCE,115

DescriptionMOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET

SubcategoryMOSFETs

Unit Weight0.000099 oz

USHTS8541210095

Part # Aliases934065733115

Pd - Power Dissipation330 mW

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels2 Channel

Rise Time4 ns, 30 ns

Moisture Sensitivity Level1 (Unlimited)