参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage650 mV
TechnologySi
Id - Continuous Drain Current5.3 A
Transistor PolarityN-Channel
Typical Turn-On Delay Time40 ns
Rds On - Drain-Source Resistance30 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time4 ns
Qg - Gate Charge14.4 nC
Package / CaseDFN-2020-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandNexperia
PackagingReel
PackagingMouseReel
PackagingCut Tape
ManufacturerNexperia
Product CategoryMOSFET
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity3000
Fall Time16 ns
ImageNexperia PMDPB30XN,115
DescriptionMOSFET PMDPB30XN/SOT1118/HUSON6
SubcategoryMOSFETs
Unit Weight0.000254 oz
Part # Aliases934066581115
Pd - Power Dissipation8.33 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time15 ns