参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage650 mV
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityP-Channel
MXHTS85412101
Typical Turn-On Delay Time4 ns
KRHTS8541219000
Rds On - Drain-Source Resistance55 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time135 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseDFN-2020-6
CAHTS8541210000
CNHTS8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Qg - Gate Charge16.5 nC
Factory Pack Quantity3000
ImageNexperia PMDPB55XP,115
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
BrandNexperia
DescriptionMOSFET 20V, Dual P-Channel Trench MOSFET
TARIC8541210000
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerNexperia
Channel ModeEnhancement
Fall Time68 ns
Unit Weight0.000254 oz
USHTS8541210075
Part # Aliases934066506115
Pd - Power Dissipation8.3 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time14 ns