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PMDPB58UPE,115
厂牌：NEXPERIA
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000047958198
描述：Trans MOSFET P-CH 20V 4.5A 6-Pin HUSON EP
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min9 S, 9 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage950 mV
TechnologySi
MXHTS85412999
Id - Continuous Drain Current4.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7 ns, 7 ns
KRHTS8541299000
Rds On - Drain-Source Resistance58 mOhms, 58 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time41 ns, 41 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseDFN-2020-6
CAHTS8541290000
CNHTS8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Qg - Gate Charge9.5 nC
ImageNexperia PMDPB58UPE,115
Factory Pack Quantity3000
PackagingCut Tape
PackagingReel
Product TypeMOSFET
BrandNexperia
DescriptionMOSFET 20V, Dual P-Channel Trench MOSFET
TARIC8541290000
Product CategoryMOSFET
RoHS Details
SubcategoryMOSFETs
ManufacturerNexperia
Channel ModeEnhancement
Fall Time14 ns, 14 ns
Unit Weight0.000259 oz
USHTS8541290095
Part # Aliases934066845115
Pd - Power Dissipation1.21 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time15 ns, 15 ns