参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width3.5 mm
Collector-Emitter Saturation Voltage- 0.5 V
Height1.57 mm
DC Collector/Base Gain hfe Min25
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageON Semiconductor BCP53T1G
SubcategoryTransistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandON Semiconductor
SeriesBCP53
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
ManufacturerON Semiconductor
Unit Weight0.006349 oz
USHTS8541290075
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 1.5A 100V PNP
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)