参数项参数值
参数项参数值
DC Current Gain hFE Max160 at - 150 mA, - 2 VDC
Gain Bandwidth Product fT50 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current- 1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Minimum Operating Temperature- 65 C
ImageON Semiconductor SBCP53-10T1G
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage- 500 mV
Maximum Operating Temperature+ 150 C
Package / CaseSOT-223-4
DC Collector/Base Gain hfe Min63 at - 150 mA, - 2 VDC
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 80V
Mounting StyleSMD/SMT
Factory Pack Quantity1000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
RoHS Details
SeriesBCP53
SubcategoryTransistors
Unit Weight0.003880 oz
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)