参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
DC Collector/Base Gain hfe Min40
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.003951 oz
RoHS Details
Pd - Power Dissipation2000 mW
SeriesBCP53
ImageDiodes Incorporated BCP53TA
BrandDiodes Incorporated
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541290095
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K