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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max250 at - 150 mA, - 2 V
Gain Bandwidth Product fT125 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min25 at - 5 mA, - 2 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541300003
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541300000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.003951 oz
TARIC8541300000
RoHS Details
Pd - Power Dissipation2 W
SeriesBCP53
ImageDiodes Incorporated BCP5316TA
BrandDiodes Incorporated
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541300080
DescriptionBipolar Transistors - BJT PNP Medium Power
Moisture Sensitivity Level1 (Unlimited)