参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 0.5 V
MXHTS85412999
Width3.5 mm
DC Collector/Base Gain hfe Min25
Height1.57 mm
Length6.5 mm
KRHTS8541299000
Package / CaseSOT-223-4
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor BCP53-10T1G
TARIC8541290000
RoHS Details
Factory Pack Quantity1000
ManufacturerON Semiconductor
SeriesBCP53
Unit Weight0.003951 oz
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1.5A 100V PNP
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation1.5 W
SubcategoryTransistors
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)