SI2307CDS-T1-GE3

SI2307CDS-T1-GE3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047959758

描述：Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min7 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current3.5 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time5.5 ns

Width1.6 mm

Rds On - Drain-Source Resistance88 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time17 ns

Height1.45 mm

Length2.9 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Qg - Gate Charge4.1 nC

Package / CaseSOT-23-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

RoHS Details

ImageVishay Semiconductors SI2307CDS-T1-GE3

PackagingCut Tape

PackagingMouseReel

PackagingReel

SubcategoryMOSFETs

Channel ModeEnhancement

BrandVishay Semiconductors

Fall Time7.7 ns

SeriesSI2

Product TypeMOSFET

Factory Pack Quantity3000

ManufacturerVishay

Unit Weight0.000282 oz

USHTS8541290095

Product CategoryMOSFET

DescriptionMOSFET -30V Vds 20V Vgs SOT-23

Part # AliasesSI2307CDS-GE3

Pd - Power Dissipation1.8 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time13 ns

Moisture Sensitivity Level1 (Unlimited)