参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.5 ns
Width1.6 mm
Rds On - Drain-Source Resistance88 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time17 ns
Height1.45 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge4.1 nC
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageVishay Semiconductors SI2307CDS-T1-GE3
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandVishay Semiconductors
Fall Time7.7 ns
SeriesSI2
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerVishay
Unit Weight0.000282 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET -30V Vds 20V Vgs SOT-23
Part # AliasesSI2307CDS-GE3
Pd - Power Dissipation1.8 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)