参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current65 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns
Rds On - Drain-Source Resistance4.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13.5 ns
MXHTS85412999
Qg - Gate Charge16.7 nC
KRHTS8541299000
Package / CasePowerDI5060-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time4.6 ns
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.003422 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation42 W
ImageDiodes Incorporated DMT36M1LPS-13
Factory Pack Quantity2500
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time5.5 ns
DescriptionMOSFET MOSFETBVDSS: 25V-30V
USHTS8541290095