参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max- 12 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 120 mV
DC Collector/Base Gain hfe Min270
Width1.6 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
CNHTS8541290000
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SB1690KT146
Series2SB1690K
Unit Weight0.000282 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SB1690K
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP 12V 2A