参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT330 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage160 mV
DC Collector/Base Gain hfe Min270
Width1.6 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD2657KT146
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
Series2SD2657K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SD2657K
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 30V 1.5A
USHTS8541290095