参数项参数值
参数项参数值
Gain Bandwidth Product fT140 MHz, 180 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO7 V
DC Collector/Base Gain hfe Min120
Width1.2 mm
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor EMY1T2R
TARIC8541290000
Pd - Power Dissipation150 mW
RoHS Details
Part # AliasesEMY1
Factory Pack Quantity8000
SeriesEMY1
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT RECOMMENDED ALT 755-VT6Z2T2R
SubcategoryTransistors
USHTS8541290095