参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length1.6 mm
Width0.8 mm
Height0.7 mm
KRHTS8541299000
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseSC-59-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor DTC114TETL
BrandROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - Pre-Biased NPN 50V 100MA
SeriesDTC114TE
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Unit Weight0.001129 oz
USHTS8541290095
Part # AliasesDTC114TE
Pd - Power Dissipation150 mW
Typical Input Resistor10 kOhms