参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
MXHTS85412999
Width1.6 mm
DC Collector/Base Gain hfe Min80
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor IMB10AT110
SeriesIMB10A
Factory Pack Quantity3000
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA SOT-457
Pd - Power Dissipation300 mW
Part # AliasesIMB10A
USHTS8541290095
Typical Resistor Ratio0.048
Typical Input Resistor2.2 kOhms