参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
MXHTS85412999
Width1.6 mm
DC Collector/Base Gain hfe Min68
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-74-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesIMB2A
ImageROHM Semiconductor IMB2AT110
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Pd - Power Dissipation300 mW
Part # AliasesIMB2A
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 30MA
USHTS8541290095
Typical Resistor Ratio1
Typical Input Resistor47 kOhms