参数项参数值
参数项参数值
DC Current Gain hFE Max2700
Peak DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current600 mA
ConfigurationDual
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
MXHTS85412999
Width1.6 mm
DC Collector/Base Gain hfe Min820
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSMT-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor IMH21T110
SeriesIMH21
Factory Pack Quantity3000
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - Pre-Biased TRANS DIGI BJT NPN 20V 600MA 6PIN
Part # AliasesIMH21
USHTS8541290095
Typical Input Resistor10 kOhms