RGW60TK65GVC11

厂牌：ROHM

包装：TUBE 450

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000048006942

描述：IGBT SINGLE 650V 33A TO-3PFM; DC Collector Current:33A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:72W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Gate-Emitter Leakage Current200 nA

Collector- Emitter Voltage VCEO Max650 V

ConfigurationSingle

TechnologySi

Maximum Gate Emitter Voltage30 V

Collector-Emitter Saturation Voltage1.5 V

Minimum Operating Temperature- 40 C

Mounting StyleThrough Hole

Package / CaseTO-3PFM

Maximum Operating Temperature+ 175 C

ImageROHM Semiconductor RGW60TK65GVC11

TARIC8541290000

PackagingTube

RoHS Details

SubcategoryIGBTs

Factory Pack Quantity1

Product CategoryIGBT Transistors

BrandROHM Semiconductor

Product TypeIGBT Transistors

DescriptionIGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT

ManufacturerROHM Semiconductor

USHTS8541290095

Continuous Collector Current at 25 C33 A

Pd - Power Dissipation72 W

Continuous Collector Current Ic Max33 A