参数项参数值
参数项参数值
Gate-Emitter Leakage Current200 nA
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage30 V
Collector-Emitter Saturation Voltage1.4 V
Minimum Operating Temperature- 40 C
Mounting StyleThrough Hole
Package / CaseTO-3PFM
Maximum Operating Temperature+ 175 C
ImageROHM Semiconductor RGCL60TK60DGC11
TARIC8541290000
PackagingTube
RoHS Details
SubcategoryIGBTs
Factory Pack Quantity30
Product CategoryIGBT Transistors
BrandROHM Semiconductor
Product TypeIGBT Transistors
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM Semiconductor
USHTS8541290095
Continuous Collector Current at 25 C30 A
Part # AliasesRGCL60TK60D
Pd - Power Dissipation54 W