参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current600 mA
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage2 V
DC Collector/Base Gain hfe Min100
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor UM2222AU3HZGT106
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS MED PWR
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation200 mW
SubcategoryTransistors
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)