参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min80
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UMH10NTN
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
SeriesUMH10N
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.000265 oz
USHTS8541290095
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-363
Part # AliasesUMH10N
Pd - Power Dissipation150 mW
Typical Resistor Ratio0.047
Typical Input Resistor2.2 kOhms
Moisture Sensitivity Level1 (Unlimited)