参数项参数值
参数项参数值
Gate-Emitter Leakage Current25 uA
Collector- Emitter Voltage VCEO Max450 V
ConfigurationSingle
Maximum Gate Emitter Voltage10 V
Collector-Emitter Saturation Voltage1.3 V
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingReel
RoHS Details
Continuous Collector Current at 25 C23 A
ImageON Semiconductor FGD3245G2-F085V
BrandON Semiconductor
ManufacturerON Semiconductor
Pd - Power Dissipation150 W
Factory Pack Quantity2500
Product TypeIGBT Transistors
Product CategoryIGBT Transistors
SubcategoryIGBTs
DescriptionIGBT Transistors IGBT N-Channel Ignition 1.3V 320mJ