FGD3245G2-F085V

厂牌:onsemi
包装:REEL 1
类目:元器件 > 分立器件 > IGBT晶体管
编号:B000048038119
描述:IGBTs IGBT N-Channel Ignition 1.3V 320mJ
最新价格近期成交44单+
数量价格(含税)
2500¥7.7420
5000¥7.5483
10000¥7.4553
20000¥7.3639
40000¥7.2751
库存:0交期:2-3 weeks起订:2500增量:2500
数量:
X
7.7420(单价)
合计:
¥19355.00
商品满500包邮
商品参数
参数项参数值
参数项参数值
Gate-Emitter Leakage Current25 uA
Collector- Emitter Voltage VCEO Max450 V
ConfigurationSingle
Maximum Gate Emitter Voltage10 V
Collector-Emitter Saturation Voltage1.3 V
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingReel
RoHS Details
Continuous Collector Current at 25 C23 A
ImageON Semiconductor FGD3245G2-F085V
BrandON Semiconductor
ManufacturerON Semiconductor
Pd - Power Dissipation150 W
Factory Pack Quantity2500
Product TypeIGBT Transistors
Product CategoryIGBT Transistors
SubcategoryIGBTs
DescriptionIGBT Transistors IGBT N-Channel Ignition 1.3V 320mJ