SUD09P10-195-GE3

SUD09P10-195-GE3

厂牌：威世(VISHAY)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000048047192

描述：MOSFET P-CH 100V DPAK

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min12 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current8.8 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Length6.73 mm

Height2.38 mm

JPHTS8541290100

Typical Turn-On Delay Time7 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

Transistor Type1 P-Channel

Typical Turn-Off Delay Time33 ns

Package / CaseTO-252-3

RoHS Details

ImageVishay Semiconductors SUD09P10-195-GE3

Factory Pack Quantity2000

PackagingMouseReel

PackagingReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

Width6.22 mm

TARIC8541290000

ManufacturerVishay

SubcategoryMOSFETs

BrandVishay Semiconductors

Mounting StyleSMD/SMT

DescriptionMOSFET -100V 195mOhms@ 10V -8.8A

Product CategoryMOSFET

Qg - Gate Charge23.2 nC

MXHTS85412999

SeriesSUD

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.011993 oz

Fall Time9 ns

CNHTS8541290000

Pd - Power Dissipation32.1 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time12 ns

Moisture Sensitivity Level1 (Unlimited)