参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current107 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time33 ns
Rds On - Drain-Source Resistance5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time48 ns
MXHTS85412999
Qg - Gate Charge72.5 nC
KRHTS8541299000
Package / CasePowerFLAT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time20 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.002681 oz
ImageSTMicroelectronics STL115N10F7AG
SeriesSTL115N10F7AG
BrandSTMicroelectronics
Pd - Power Dissipation136 W
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET LGS LV MOSFET
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
TradenameSTripFET
Number of Channels1 Channel
Rise Time38 ns
Moisture Sensitivity Level1 (Unlimited)