参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge29 nC
Mounting StyleSMD/SMT
Package / CasePowerFLAT-5x6-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingReel
PackagingCut Tape
Factory Pack Quantity3000
CNHTS8541290000
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SeriesSTL140N4F7AG
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET LGS LV MOSFET
ImageSTMicroelectronics STL140N4F7AG
Fall Time5.7 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.002681 oz
USHTS8541290095
Pd - Power Dissipation111 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time6.6 ns
Moisture Sensitivity Level1 (Unlimited)