参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance2.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge41 nC
Package / CaseDPAK-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time13 ns
TARIC8541290000
ImageSTMicroelectronics STD134N4F7AG
Unit Weight0.011640 oz
SeriesSTD134N4F7AG
BrandSTMicroelectronics
Pd - Power Dissipation134 W
Factory Pack Quantity2500
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET LGS LV MOSFET
Vds - Drain-Source Breakdown Voltage40 V
USHTS8541290095
TradenameSTripFET
Number of Channels1 Channel
Rise Time17.5 ns
Moisture Sensitivity Level1 (Unlimited)