参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current108 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time18 ns
ImageSTMicroelectronics STL110N4F7AG
Product CategoryMOSFET
Rds On - Drain-Source Resistance4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Maximum Operating Temperature+ 175 C
Package / CasePowerFLAT-5x6-4
DescriptionMOSFET LGS LV MOSFET
PackagingCut Tape
PackagingReel
Mounting StyleSMD/SMT
TARIC8541290000
BrandSTMicroelectronics
Qg - Gate Charge15 nC
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerSTMicroelectronics
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time16 ns
Unit Weight0.002681 oz
Pd - Power Dissipation94 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time85 ns
Moisture Sensitivity Level1 (Unlimited)